60612 tkim/o1409pa tkim tc-00002077 no. a1559-1/9 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 sft1342 p-channel power mosfet ? 60v, ? 12a, 62m , single tp/tp-fa stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. 1 3 2, 4 ordering number : ena1559a features ? motor drive application ? protection diode in ? 4v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --60 v gate-to-source voltage v gss 20 v drain current (dc) i d --12 a drain current (pw 10 s) i dp pw 10 s, duty cycle 1% --48 a allowable power dissipation p d 1.0 w tc=25 c15w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7518-004 7003-004 product & package information ? package : tp ? package : tp-fa ? jeita, jedec : sc-64, to-251 ? jeita, jedec : sc-63, to-252 ? minimum packing quantity : 500 pcs./bag ? minimum packing quantity : 700 pcs./reel marking packing type (tp-fa) : tl electrical connection (tp, tp-fa) 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : gate 2 : drain 3 : source 4 : drain tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : gate 2 : drain 3 : source 4 : drain tp-fa tl SFT1342-E sft1342-tl-e t1342 lot no.
sft1342 no. a1559-2/9 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --60 v zero-gate voltage drain current i dss v ds =--60v, v gs =0v --1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance | yfs | v ds =--10v, i d =--6a 11 s static drain-to-source on-state resistance r ds (on)1 i d =--6a, v gs =--10v 47 62 m r ds (on)2 i d =--6a, v gs =--4.5v 62 87 m r ds (on)3 i d =--6a, v gs =--4v 68 96 m input capacitance ciss v ds =--20v, f=1mhz 1150 pf output capacitance coss 115 pf reverse transfer capacitance crss 95 pf turn-on delay time t d (on) see speci ed test circuit. 10 ns rise time t r 37 ns turn-off delay time t d (off) 135 ns fall time t f 75 ns total gate charge qg v ds =--30v, v gs =--10v, i d =--12a 26 nc gate-to-source charge qgs 3.5 nc gate-to-drain ?miller? charge qgd 5nc diode forward voltage v sd i s =--12a, v gs =0v --0.95 --1.2 v switching time test circuit ordering information device package shipping memo SFT1342-E tp 500pcs./bag pb free sft1342-tl-e tp-fa 700pcs./reel pw=10 s d.c. 1% p. g 50 g s d i d = --6a r l =5 v dd = --30v v out v in 0v --10v v in sft1342
sft1342 no. a1559-3/9 i d -- v ds i d -- v gs drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v it15024 it115025 0 0 -- 8 -- 7 -- 9 --12 --11 --10 --0.4 --0.3 --1.0 --0.2 --0.1 --0.9 --0.6 --0.5 --0.8 --0.7 -- 6 -- 5 -- 4 -- 3 -- 2 -- 1 0 --12 --10 --14 --16 -- 8 -- 6 -- 4 -- 2 0 --4.0 --3.0 --3.5 --2.5 --0.5 --1.5 --1.0 --2.0 --3.5v --16.0v v gs = --2.5v --3.0v ta= --25 c ta=75 c --25 c 25 c 25 c 75 c --4.5v --10.0v v ds = --10v --6.0v --4.0v i s -- v sd drain current, i d -- a diode forward voltage, v sd -- v sw time -- i d ciss, coss, crss -- v ds switching time, sw time -- ns ciss, coss, crss -- pf drain current, i d -- a drain-to-source voltage, v ds -- v r ds (on) -- v gs r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v source current, i s -- a | y fs | -- i d forward transfer admittance, | y fs | -- s it15026 it15027 --60 --40 --20 0 20 40 60 80 100 140 120 160 it15029 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 --0.01 --0.1 --10 3 2 7 5 3 2 7 5 3 2 7 5 3 2 --1.0 it15028 25 c --25 c ta=75 c --0.01 --0.1 23 57 --1.0 --10 23 23 57 23 57 1.0 0.1 10 7 5 7 2 3 2 2 3 5 3 7 5 v ds = --10v ta= --25 c 75 c v gs =0v -- 5 0 140 120 100 80 60 40 20 160 140 120 100 80 60 40 20 --2 --13 -- 9 --3 --7 --16 --15 --11 --6 --14 --10 --4 --8 --12 0 ta=25 c i d = --6a v gs = --10.0v, i d = --6.0a it15030 10 100 3 2 2 5 5 7 7 3 5 --0.1 --1.0 --10 23 57 2 2 33 57 v dd = --30v v gs = --10v t d (off) t r t d (on) 0 100 1000 7 5 3 3 2 7 5 3 2 --20 --60 --10 --40 --50 --30 it15031 f=1mhz ciss coss crss 25 c t f v gs = --4.5v, i d = --6.0a v gs = --4.0v, i d = --6.0a ambient temperature, ta -- c
sft1342 no. a1559-4/9 a s o drain-to-source voltage, v ds -- v drain current, i d -- a v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v it15033 --0.1 2 3 5 7 2 3 5 7 2 3 5 7 --1.0 --0.1 10 s 100 s 100ms 10ms 1ms dc operation --1.0 --10 --100 2 3 57 2 3 57 2 3 57 --10 --100 operation in this area is limited by r ds (on). i d = --12a it115032 0 -- 1 -- 2 -- 3 -- 4 -- 6 -- 5 -- 7 -- 8 -- 9 --10 v ds = --30v i d = --12a 030 25 20 51015 i dp = --48a pw 10 s tc=25 c single pulse it12263 0 20 40 60 80 100 120 140 160 0.2 0 0.4 0.6 0.8 1.0 1.2 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w no heat sink p d -- tc case temperature, tc -- c allowable power dissipation, p d -- w it15034 20 15 10 5 0 0 20 40 60 80 100 120 140 160
sft1342 no. a1559-5/9 taping speci cation sft1342-tl-e
sft1342 no. a1559-6/9 outline drawing land pattern example sft1342-tl-e mass (g) unit 0.282 * for reference mm unit: mm 7.0 1.5 2.3 2.0 2.5 2.3 7.0
sft1342 no. a1559-7/9 bag packing speci cation SFT1342-E
sft1342 no. a1559-8/9 outline drawing SFT1342-E mass (g) unit 0.315 * for reference mm
sft1342 ps no. a1559-9/9 note on usage : since the sft1342 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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